The transfer printing of aluminum gallium arsenide (AlGaAs) microdisk resonators onto a silicon-on-insulator (SOI) waveguide platform is demonstrated. The integrated resonators exhibit loaded Q-factors reaching 4 × 104, and the vertical assembly approach allows selective coupling to different spatial mode families. The hybrid platform’s nonlinearity is characterized by four-wave mixing with a measured nonlinear coefficient of γ = 325 (Wm)−1, with the devices demonstrating minimal two-photon absorption and free-carrier absorption losses that are inherent to SOI at telecommunications wavelengths.
Transfer printing of AlGaAs-on-SOI microdisk resonators for selective mode coupling and low-power nonlinear processes
Sorel M.;
2020-01-01
Abstract
The transfer printing of aluminum gallium arsenide (AlGaAs) microdisk resonators onto a silicon-on-insulator (SOI) waveguide platform is demonstrated. The integrated resonators exhibit loaded Q-factors reaching 4 × 104, and the vertical assembly approach allows selective coupling to different spatial mode families. The hybrid platform’s nonlinearity is characterized by four-wave mixing with a measured nonlinear coefficient of γ = 325 (Wm)−1, with the devices demonstrating minimal two-photon absorption and free-carrier absorption losses that are inherent to SOI at telecommunications wavelengths.File in questo prodotto:
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