A low temperature nickel process has been developed that produces Ohmic contacts to n-type germanium with specific contact resistivities down to (2.3 ± 1.8) à 10 -7 Ω-cm 2 for anneal temperatures of 340 °C. The low contact resistivity is attributed to the low resistivity NiGe phase which was identified using electron diffraction in a transmission electron microscope. Electrical results indicate that the linear Ohmic behaviour of the contact is attributed to quantum mechanical tunnelling through the Schottky barrier formed between the NiGe alloy and the heavily doped n-Ge. © 2012 American Institute of Physics.
Ohmic contacts to n-type germanium with low specific contact resistivity
VELHA, PHILIPPE;
2012-01-01
Abstract
A low temperature nickel process has been developed that produces Ohmic contacts to n-type germanium with specific contact resistivities down to (2.3 ± 1.8) à 10 -7 Ω-cm 2 for anneal temperatures of 340 °C. The low contact resistivity is attributed to the low resistivity NiGe phase which was identified using electron diffraction in a transmission electron microscope. Electrical results indicate that the linear Ohmic behaviour of the contact is attributed to quantum mechanical tunnelling through the Schottky barrier formed between the NiGe alloy and the heavily doped n-Ge. © 2012 American Institute of Physics.File in questo prodotto:
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