We describe the fabrication and characterization of a silicon waveguide resonant photodetector compatible with the optical-to-electrical conversion of wavelengths at, or around, 1550 nm. Sub-band responsivity is provided through the introduction of defects via inert self-implantation and subsequent annealing. The detector is located within a 20-μm radius silicon microring resonator. An 18-dB resonant enhancement in absorption coefficient and 12-dB enhancement in photocurrent were measured, leading to a resonant responsivity of approximately 39 mA/W at 20-V reverse bias. © 2006 IEEE.

Defect-enhanced silicon-on-insulator waveguide resonant photodetector with high sensitivity at 1.55 μm

VELHA, PHILIPPE;Sorel, Marc;
2010-01-01

Abstract

We describe the fabrication and characterization of a silicon waveguide resonant photodetector compatible with the optical-to-electrical conversion of wavelengths at, or around, 1550 nm. Sub-band responsivity is provided through the introduction of defects via inert self-implantation and subsequent annealing. The detector is located within a 20-μm radius silicon microring resonator. An 18-dB resonant enhancement in absorption coefficient and 12-dB enhancement in photocurrent were measured, leading to a resonant responsivity of approximately 39 mA/W at 20-V reverse bias. © 2006 IEEE.
2010
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11382/516839
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