In this Letter we present the design of a novel (to our best knowledge) integrated TE isolator realized using ultra-low-loss Si(3)N(4) waveguides. The device is made of two straight waveguides coupled to an array of ring resonators including a Ce:YIG garnet grown on their internal side. The analysis demonstrates advantages in loss, isolation, and passband width as the number of rings is increased.
Design of transverse electric ring isolators for ultra-low-loss Si3N4 waveguides based on the finite element method
PINTUS, Paolo;DI PASQUALE, Fabrizio Cesare Filippo;
2011-01-01
Abstract
In this Letter we present the design of a novel (to our best knowledge) integrated TE isolator realized using ultra-low-loss Si(3)N(4) waveguides. The device is made of two straight waveguides coupled to an array of ring resonators including a Ce:YIG garnet grown on their internal side. The analysis demonstrates advantages in loss, isolation, and passband width as the number of rings is increased.File in questo prodotto:
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