LEDs are reported from Ge-on-Si in which process induced strain has increased the emission wavelength. The direct bandgap electroluminescence emits up to ⼠μW of power between 1.6 μm and â¼1.8 μm, significantly larger than previous LEDs. © 2012 IEEE.
Tuning the electroluminescence of n-Ge LEDs using process induced strain
VELHA, PHILIPPE;
2012-01-01
Abstract
LEDs are reported from Ge-on-Si in which process induced strain has increased the emission wavelength. The direct bandgap electroluminescence emits up to ⼠μW of power between 1.6 μm and â¼1.8 μm, significantly larger than previous LEDs. © 2012 IEEE.File in questo prodotto:
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