The fabrication and characterisation of LED structures made of Ge grown on Si is reported. An average power levels at 1.7 micron of 10 micro-Watt, many orders of magnitude larger than the nW previously reported.
Direct band-gap electroluminescence from strained n-doped germanium diode
VELHA, PHILIPPE;
2012-01-01
Abstract
The fabrication and characterisation of LED structures made of Ge grown on Si is reported. An average power levels at 1.7 micron of 10 micro-Watt, many orders of magnitude larger than the nW previously reported.File in questo prodotto:
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