We present the design modelling and fabrication of Silicon-On-Insulator (SOI) nanobeam cavities that are immersed in a microfluidic system for refractive index sensing. The device has sensitivity value of greater than 200 nm/RIU with a Q-factor more than 20 000 in water. It was fabricated on a SOI platform and working at telecom wavelengths. The use of the SOI platform also offers further possibilities of integration with CMOS technologies. © 2012 SPIE.
Silicon-On-Insulator (SOI) nanobeam optical cavities for refractive index based sensing
VELHA, PHILIPPE;
2012-01-01
Abstract
We present the design modelling and fabrication of Silicon-On-Insulator (SOI) nanobeam cavities that are immersed in a microfluidic system for refractive index sensing. The device has sensitivity value of greater than 200 nm/RIU with a Q-factor more than 20 000 in water. It was fabricated on a SOI platform and working at telecom wavelengths. The use of the SOI platform also offers further possibilities of integration with CMOS technologies. © 2012 SPIE.File in questo prodotto:
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