400GHz spaced MZI interleaver is designed and fabricated on a SOI wafer by fully CMOS compatible process. The width and length of the MZI are optimized to reduce the temperature-dependent wavelength shift without using a negative thermo-optic material.
CMOS-compatible athermal 400GHz-spaced MZI interleaver
OTON NIETO, CLAUDIO JOSE;
2016-01-01
Abstract
400GHz spaced MZI interleaver is designed and fabricated on a SOI wafer by fully CMOS compatible process. The width and length of the MZI are optimized to reduce the temperature-dependent wavelength shift without using a negative thermo-optic material.File in questo prodotto:
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